Infineon HEXFET Type N-Channel MOSFET, 557 A, 40 V Enhancement, 7-Pin TO-263

RS-artikelnummer:: 222-4754
Tillv. art.nr:: IRL40SC228
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 557 A, 40 V Enhancement, 7-Pin TO-263

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18 734,40 kr

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23 417,60 kr

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RS-artikelnummer:: 222-4754
Tillv. art.nr:: IRL40SC228
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	557A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	0.65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	307nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	416W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Length	10.54mm
	Height	4.83mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 557A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 0.65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 307nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 416W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Length 10.54mm
	Height 4.83mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRL40SC228

Infineon HEXFET Series MOSFET, 557A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRL40SC228

This high power MOSFET is designed for various applications requiring robust performance and efficiency. It features a compact D2PAK-7 surface mount package, ensuring convenient installation in space-constrained environments. With a continuous drain current capability of 557A and a maximum drain-source voltage of 40V, its dimensions measure 10.54mm in length, 9.65mm in width, and 4.83mm in height.

Features & Benefits

• Optimised for logic level drive for enhanced compatibility

• Low RDS(on) of 0.50mΩ for reduced power loss

• High current capacity up to 557A for demanding applications

• Versatile applications in motor drives and power supplies

Applications

• Suitable for brushed and BLDC motor drive circuits

• Ideal for battery-powered electronic systems

• Utilised in half-bridge and full-bridge circuit topologies

• Effective as a synchronous rectifier in power supply

• Used in DC-DC and AC-DC converters

What are the key benefits of using this device in high-current applications?

The device's low on-resistance significantly improves efficiency, allowing for higher current flow without substantial heat generation. This supports reliability and performance in demanding situations where current capacity is critical.

How does this MOSFET perform under high temperature conditions?

It operates effectively across a wide temperature range from -55°C to +175°C, ensuring stability and functionality even under extreme operating conditions.

What features enhance the robustness of this MOSFET during operation?

Enhanced gate and avalanche ruggedness protect it from voltage spikes, while its low dynamic dV/dt capabilities contribute to consistent performance in rapidly changing conditions.