Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3
- RS-artikelnummer:
- 256-7347
- Tillv. art.nr:
- SI2329DS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
131,50 kr
(exkl. moms)
164,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 900 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 5,26 kr | 131,50 kr |
| 50 - 75 | 5,156 kr | 128,90 kr |
| 100 - 225 | 3,934 kr | 98,35 kr |
| 250 - 975 | 3,853 kr | 96,33 kr |
| 1000 + | 2,392 kr | 59,80 kr |
*vägledande pris
- RS-artikelnummer:
- 256-7347
- Tillv. art.nr:
- SI2329DS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6A | |
| Maximum Drain Source Voltage Vds | -8V | |
| Series | Si2329DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Typical Gate Charge Qg @ Vgs | 19.3nC | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6A | ||
Maximum Drain Source Voltage Vds -8V | ||
Series Si2329DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Typical Gate Charge Qg @ Vgs 19.3nC | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 3.04mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Width 1.4 mm | ||
Automotive Standard No | ||
The Vishay Semiconductor P-channel 8 V 6A (Tc) 2.5W (Tc) surface mount SOT-23-3 (TO-236) halogen-free according to IEC 61249-2-21 definition.
TrenchFET power mosfet
100 % Rg tested
Compliant to RoHS directive 2002/95/EC
relaterade länkar
- Vishay Si2329DS Type P-Channel MOSFET -8 V, 3-Pin SOT-23
- Vishay P-Channel MOSFET Transistor 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3
- Vishay Type P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2393DS-T1-GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3
- Vishay Si2377EDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2377EDS-T1-GE3
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
