onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTHL015N065SC1

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210,02 kr

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262,52 kr

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Förpackningsalternativ:
RS-artikelnummer:
254-7675
Tillv. art.nr:
NTHL015N065SC1
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

283nC

Maximum Power Dissipation Pd

117W

Forward Voltage Vf

4.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L


The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in solar inverters

High junction temperature

High speed switching and low capacitance

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