Vishay SiS4608DN Type N-Channel MOSFET, 35.7 A, 60 V Depletion, 8-Pin PowerPAK 1212-8 SIS4608DN-T1-GE3
- RS-artikelnummer:
- 252-0287
- Tillv. art.nr:
- SIS4608DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
77,84 kr
(exkl. moms)
97,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 6 000 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 7,784 kr | 77,84 kr |
| 100 - 490 | 7,325 kr | 73,25 kr |
| 500 - 990 | 6,608 kr | 66,08 kr |
| 1000 - 2490 | 6,227 kr | 62,27 kr |
| 2500 + | 5,835 kr | 58,35 kr |
*vägledande pris
- RS-artikelnummer:
- 252-0287
- Tillv. art.nr:
- SIS4608DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Series | SiS4608DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33.7W | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 3.3mm | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Series SiS4608DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33.7W | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 3.3mm | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
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