Vishay Type N-Channel MOSFET & Diode, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3
- RS-artikelnummer:
- 252-0264
- Tillv. art.nr:
- SIHK055N60EF-T1GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 enhet)*
104,27 kr
(exkl. moms)
130,34 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 104,27 kr |
| 10 - 24 | 98,00 kr |
| 25 - 49 | 88,59 kr |
| 50 - 99 | 83,33 kr |
| 100 + | 78,18 kr |
*vägledande pris
- RS-artikelnummer:
- 252-0264
- Tillv. art.nr:
- SIHK055N60EF-T1GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05mΩ | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 132W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05mΩ | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 132W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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