Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rulle med 3000 enheter)*

1 704,00 kr

(exkl. moms)

2 130,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 9 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
3000 - 30000,568 kr1 704,00 kr
6000 - 120000,539 kr1 617,00 kr
15000 +0,517 kr1 551,00 kr

*vägledande pris

RS-artikelnummer:
250-0541
Tillv. art.nr:
BSS138WH6327XTSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-323

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes SIPMOS Small-Signal-Transistor, N-channel, Enhancement mode. The device is dv /dt rated and Pb-free lead-plating. It has Vds of 60 V, Rds(on)max is 3.5 Ω and Id is 0.28 A. It is Halogen-free, P-channel Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

100% lead-free

Maximum power dissipation is 360mW

relaterade länkar