Infineon FS55MR12W1M1H_B11 Type N-Channel MOSFET, 15 A, 1200 V Enhancement, 8-Pin AG-EASY1B FS55MR12W1M1HB11NPSA1
- RS-artikelnummer:
- 250-0229
- Tillv. art.nr:
- FS55MR12W1M1HB11NPSA1
- Tillverkare / varumärke:
- Infineon
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842,24 kr
(exkl. moms)
1 052,80 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 1 | 842,24 kr |
| 2 - 4 | 800,13 kr |
| 5 - 9 | 766,42 kr |
| 10 - 19 | 732,82 kr |
| 20 + | 699,10 kr |
*vägledande pris
- RS-artikelnummer:
- 250-0229
- Tillv. art.nr:
- FS55MR12W1M1HB11NPSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY1B | |
| Series | FS55MR12W1M1H_B11 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 114mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -10 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, 60749 and 60068 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY1B | ||
Series FS55MR12W1M1H_B11 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 114mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -10 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, 60749 and 60068 | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFET EasyPACK™ 1B 1200 V / 55 mΩ sixpack module with CoolSiC™ MOSFET with enhanced generation 1, NTC and PressFIT Contact Technology.
Low inductive design
Low switching losses
Rugged mounting due to integrated mounting clamps
PressFIT contact technology
Integrated NTC temperature sensor
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