Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1
- RS-artikelnummer:
- 249-6889
- Tillv. art.nr:
- IAUC60N04S6L030HATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
25,54 kr
(exkl. moms)
31,92 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 776 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 12,77 kr | 25,54 kr |
| 20 - 48 | 11,31 kr | 22,62 kr |
| 50 - 98 | 10,53 kr | 21,06 kr |
| 100 - 198 | 10,305 kr | 20,61 kr |
| 200 + | 10,135 kr | 20,27 kr |
*vägledande pris
- RS-artikelnummer:
- 249-6889
- Tillv. art.nr:
- IAUC60N04S6L030HATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | OptiMOS-TM6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series OptiMOS-TM6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
relaterade länkar
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC45N04S6L063H Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOSTM Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC60N04S6N050H Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
