Infineon OptiMOS-TM6 Type N-Channel MOSFET, 656 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1

Se alla MOSFETs
För närvarande inte tillgänglig
Tyvärr, vi vet inte när detta kommer att finnas i lager igen.
RS-artikelnummer:
348-840
Tillv. art.nr:
IQFH36N04NM6ATMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

656A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-TM6

Package Type

PG-TSON-12

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.36mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon 40 V normal level power MOSFET comes in our latest innovative, compact clip based PQFN 8x6 mm2 package enabling very high currents and power levels. The part offers current industry-best RDS(on) of 0.36 mΩ combined with outstanding thermal performance.

Minimized conduction losses

Fast switching

Reduced voltage overshoot

relaterade länkar