onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 5-Pin DFN-5
- RS-artikelnummer:
- 248-5821
- Tillv. art.nr:
- NTMFS002N10MCLT1G
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 1500 enheter)*
19 569,00 kr
(exkl. moms)
24 462,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1500 + | 13,046 kr | 19 569,00 kr |
*vägledande pris
- RS-artikelnummer:
- 248-5821
- Tillv. art.nr:
- NTMFS002N10MCLT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | DFN-5 | |
| Series | NTM | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type DFN-5 | ||
Series NTM | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor MOSFET is a N channel MOSFET with 100 V drain to source voltage, RDS(ON) 2.8 mohm and continuous drain current 175 A also these devices are Pb−free, Halogen free/BFR free, Beryllium free and are RoHS compliant.
Small footprint (5x6 mm) for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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