onsemi NTM Type N-Channel Single MOSFETs, 66 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS4D7N04XMT1G
- RS-artikelnummer:
- 648-507
- Tillv. art.nr:
- NTMFS4D7N04XMT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
93,63 kr
(exkl. moms)
117,04 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 14 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 9,363 kr | 93,63 kr |
| 100 - 490 | 5,802 kr | 58,02 kr |
| 500 - 990 | 3,349 kr | 33,49 kr |
| 1000 + | 3,282 kr | 32,82 kr |
*vägledande pris
- RS-artikelnummer:
- 648-507
- Tillv. art.nr:
- NTMFS4D7N04XMT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.15 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.15 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best in class On Resistance for motor driver application. Lower On Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Latest 40V standard gate level power MOSFET technology
Lower On resistance
Lower gate charge
relaterade länkar
- onsemi NTM Type N-Channel MOSFET 1200 V Enhancement, 5-Pin DFN-5
- onsemi NTM Type N-Channel MOSFET 1200 V Enhancement, 5-Pin DFN-5 NTMFS002N10MCLT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFN-5 NVMFWS004N04XMT1G
- onsemi NTM Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN-5
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN-5 NTMFS3D2N10MDT1G
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN NTMFS6H824NT1G
