onsemi NTM Type N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG
- RS-artikelnummer:
- 277-046
- Tillv. art.nr:
- NTMFSC0D8N04XMTWG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 5 enheter)*
66,42 kr
(exkl. moms)
83,025 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 575 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 5 - 45 | 13,284 kr | 66,42 kr |
| 50 - 95 | 12,634 kr | 63,17 kr |
| 100 - 495 | 11,692 kr | 58,46 kr |
| 500 - 995 | 10,774 kr | 53,87 kr |
| 1000 + | 10,348 kr | 51,74 kr |
*vägledande pris
- RS-artikelnummer:
- 277-046
- Tillv. art.nr:
- NTMFSC0D8N04XMTWG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTM | |
| Package Type | DFN-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.78mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 5.1mm | |
| Width | 6.15 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTM | ||
Package Type DFN-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.78mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 5.1mm | ||
Width 6.15 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Ultra low gate charge
High speed switching with low capacitance
Soft body diode reverse recovery
Extreme lower on resistance to minimize conduction losses
Device is Pb Free and RoHS compliant
relaterade länkar
- onsemi NTM Type N-Channel MOSFET 1200 V Enhancement, 5-Pin DFN-5
- onsemi NTM Type N-Channel MOSFET 1200 V Enhancement, 5-Pin DFN-5 NTMFS002N10MCLT1G
- onsemi NTM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFN-5 NTMFS4D7N04XMT1G
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN NTMFS6H824NT1G
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN NTMFS5C645NT1G
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN-5
- onsemi NTM Type N-Channel MOSFET 1200 V N, 5-Pin DFN-5 NTMFS3D2N10MDT1G