onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V N, 5-Pin DFN-5 NTMFS3D2N10MDT1G
- RS-artikelnummer:
- 244-9183
- Tillv. art.nr:
- NTMFS3D2N10MDT1G
- Tillverkare / varumärke:
- onsemi
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40,43 kr
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50,54 kr
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 40,43 kr |
| 10 - 99 | 34,83 kr |
| 100 - 499 | 30,24 kr |
| 500 - 999 | 26,66 kr |
| 1000 + | 24,19 kr |
*vägledande pris
- RS-artikelnummer:
- 244-9183
- Tillv. art.nr:
- NTMFS3D2N10MDT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | DFN-5 | |
| Series | NTM | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type DFN-5 | ||
Series NTM | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET used as Primary Switch in Isolated DC−DC Converter, Synchronous Rectification (SR) in DC−DC and AC−DC, AC−DC Adapters (USB PD) SR, Load Switch, Hotswap, O-ring Switch, BLDC Motor and Solar Inverter. Drain−to−Source Voltage and Gate−to−Source Voltage for this MOSFET is 100 V and ±20 V respectively.
Shielded Gate MOSFET Technology
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Low QRR, Soft Recovery Body Diode
Low QOSS to Improve Light Load Efficiency
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant
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