Infineon IPN Type N-Channel MOSFET, 6.1 A, 75 V, 3-Pin SOT-223 IPN50R2K0CEATMA1
- RS-artikelnummer:
- 244-2263
- Tillv. art.nr:
- IPN50R2K0CEATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
39,45 kr
(exkl. moms)
49,31 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 010 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 3,945 kr | 39,45 kr |
| 100 - 240 | 3,741 kr | 37,41 kr |
| 250 - 490 | 3,662 kr | 36,62 kr |
| 500 - 990 | 3,427 kr | 34,27 kr |
| 1000 + | 2,778 kr | 27,78 kr |
*vägledande pris
- RS-artikelnummer:
- 244-2263
- Tillv. art.nr:
- IPN50R2K0CEATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements.
Extremely low losses due to very low FOM Rdson Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating,Halogen free mold compound.
Qualified for standard grade applications.
relaterade länkar
- Infineon IPN Type N-Channel MOSFET 75 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 950 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1