Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1

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RS-artikelnummer:
244-2271
Tillv. art.nr:
IPN60R600PFD7SATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

600V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

Low switching losses Eoss, excellent thermal behavior

Fast body diode

Wide range portfolio of RDS(on) and package variations

Enables high power density designs and small form factors

Enables efficiency gains at higher switching frequencies

Excellent commutation ruggedness

Easy to select the right parts and optimize the design

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