Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode, 40 A, 30 V, 8-Pin SuperSO8 5 x 6 BSC0924NDIATMA1
- RS-artikelnummer:
- 244-1559
- Tillv. art.nr:
- BSC0924NDIATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
50,76 kr
(exkl. moms)
63,45 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 4 805 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 10,152 kr | 50,76 kr |
| 25 - 45 | 9,654 kr | 48,27 kr |
| 50 - 120 | 8,692 kr | 43,46 kr |
| 125 - 245 | 7,796 kr | 38,98 kr |
| 250 + | 7,436 kr | 37,18 kr |
*vägledande pris
- RS-artikelnummer:
- 244-1559
- Tillv. art.nr:
- BSC0924NDIATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | OptiMOSTM | |
| Pin Count | 8 | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual N Channel | |
| Standards/Approvals | JEDEC1, IEC61249-2-22 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SuperSO8 5 x 6 | ||
Series OptiMOSTM | ||
Pin Count 8 | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual N Channel | ||
Standards/Approvals JEDEC1, IEC61249-2-22 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon has MOSFET which is OptiMOS power MOSFET,Integrated monolithic Schottky-like diode and Optimized for high performance Buck converter.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
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