Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE030N06NM5ATMA1
- RS-artikelnummer:
- 240-6632
- Tillv. art.nr:
- IQE030N06NM5ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 2 enheter)*
59,14 kr
(exkl. moms)
73,92 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 + | 29,57 kr | 59,14 kr |
*vägledande pris
- RS-artikelnummer:
- 240-6632
- Tillv. art.nr:
- IQE030N06NM5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.73V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.73V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 60V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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