Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN

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Antal (1 rulle med 5000 enheter)*

115 805,00 kr

(exkl. moms)

144 755,00 kr

(inkl. moms)

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5000 +23,161 kr115 805,00 kr

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RS-artikelnummer:
240-6631
Tillv. art.nr:
IQE030N06NM5ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Series

IQE

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.85mΩ

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

0.73V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOSTM 5 60V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses

Enabling highest power density and performance

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