Infineon CoolMOS Type N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1

Antal (1 rör med 240 enheter)*

4 722,24 kr

(exkl. moms)

5 902,80 kr

(inkl. moms)

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240 +19,676 kr4 722,24 kr

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RS-artikelnummer:
236-3675
Tillv. art.nr:
IPW65R125CFD7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-247

Series

CoolMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

98W

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Width

5.3 mm

Length

16.3mm

Height

21.5mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Outstanding light-load efficiency in industrial SMPS applications

Improved full-load efficiency in industrial SMPS applications

Price competitiveness compared to alternative offerings in the market

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