ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

Antal (1 rulle med 2500 enheter)*

17 547,50 kr

(exkl. moms)

21 935,00 kr

(inkl. moms)

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2500 +7,019 kr17 547,50 kr

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RS-artikelnummer:
235-2680
Tillv. art.nr:
R6504END3TL1
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

58W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

2.4 mm

Length

6.4mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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