ROHM Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

Antal (1 rulle med 2500 enheter)*

25 782,50 kr

(exkl. moms)

32 227,50 kr

(inkl. moms)

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2500 +10,313 kr25 782,50 kr

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RS-artikelnummer:
235-2689
Tillv. art.nr:
R6509END3TL1
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

585mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.4mm

Height

10.4mm

Width

2.4 mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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