onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247
- RS-artikelnummer:
- 233-6853
- Tillv. art.nr:
- NTH4L022N120M3S
- Tillverkare / varumärke:
- onsemi
Antal (1 rör med 450 enheter)*
49 956,30 kr
(exkl. moms)
62 445,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 15 juni 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 450 + | 111,014 kr | 49 956,30 kr |
*vägledande pris
- RS-artikelnummer:
- 233-6853
- Tillv. art.nr:
- NTH4L022N120M3S
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Gate Source Voltage Vgs | -0.45 V | |
| Maximum Power Dissipation Pd | 325W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Height | 41.36mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Gate Source Voltage Vgs -0.45 V | ||
Maximum Power Dissipation Pd 325W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Height 41.36mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).
The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested
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