Infineon IPTG Type N-Channel MOSFET, 77 A, 250 V Enhancement, 8-Pin HSOG IPTG210N25NM3FDATMA1

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

171,66 kr

(exkl. moms)

214,58 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 1 800 enhet(er) från den 19 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
2 - 885,83 kr171,66 kr
10 - 1877,225 kr154,45 kr
20 - 4872,07 kr144,14 kr
50 - 9867,705 kr135,41 kr
100 +62,665 kr125,33 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
233-4391
Tillv. art.nr:
IPTG210N25NM3FDATMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

250V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

175°C

Length

10.1mm

Standards/Approvals

No

Width

8.75 mm

Height

2.4mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG210N25NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 250 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

relaterade länkar