Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1
- RS-artikelnummer:
- 233-4387
- Tillv. art.nr:
- IPTG014N10NM5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
109,94 kr
(exkl. moms)
137,42 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 986 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 54,97 kr | 109,94 kr |
| 10 - 18 | 48,385 kr | 96,77 kr |
| 20 - 48 | 45,025 kr | 90,05 kr |
| 50 - 98 | 41,775 kr | 83,55 kr |
| 100 + | 39,03 kr | 78,06 kr |
*vägledande pris
- RS-artikelnummer:
- 233-4387
- Tillv. art.nr:
- IPTG014N10NM5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 366A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOG | |
| Series | IPTG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Width | 8.75 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 366A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOG | ||
Series IPTG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Width 8.75 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.
High efficiency and lower EMI
High performance capability
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