Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG IPTG011N08NM5ATMA1

Se alla MOSFETs

Antal (1 förpackning med 2 enheter)*

61,83 kr

(exkl. moms)

77,288 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • 1 782 enhet(er) levereras från den 26 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per förpackning*
2 +30,915 kr61,83 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
233-4385
Tillv. art.nr:
IPTG011N08NM5ATMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

408A

Maximum Drain Source Voltage Vds

80V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

178nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

2.4mm

Width

8.75 mm

Length

10.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

relaterade länkar