onsemi SiC Power Type N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247 NTH4L060N090SC1
- RS-artikelnummer:
- 229-6463
- Tillv. art.nr:
- NTH4L060N090SC1
- Tillverkare / varumärke:
- onsemi
Antal (1 enhet)*
126,34 kr
(exkl. moms)
157,92 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 228 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 1 + | 126,34 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6463
- Tillv. art.nr:
- NTH4L060N090SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 221W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.9V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 221W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.9V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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