onsemi NTHL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247 NTHL065N65S3F

RS-artikelnummer:: 178-4468
Tillv. art.nr:: NTHL065N65S3F
Tillverkare / varumärke:: onsemi

onsemi NTHL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247 NTHL065N65S3F

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126,45 kr

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158,06 kr

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RS-artikelnummer:: 178-4468
Tillv. art.nr:: NTHL065N65S3F
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	46A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTHL
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	337W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	98nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Length	15.87mm
	Standards/Approvals	No
	Width	4.82 mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 46A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTHL
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 337W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 98nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Length 15.87mm
	Standards/Approvals No
	Width 4.82 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:

700V@T_J=150

Ultra Low Gate Charge (Typ.Qg=98nC)

Low Effective Output Capacitance (Typ.Coss (eff.)=876pF)

Excellent body diode performance (lowQrr,robust body diode)

Optimized Capacitance

Typ. RDS(on)=54mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift fullbridge circuit

Lower peak Vds and lower Vgs oscillation

Applications:

Telecommunication

Cloud system

Industrial

End Products:

Telecom power

Server power

EV charger

Solar/UPS

onsemi NTHL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247 NTHL065N65S3F

GRATIS leverans för online beställningar över 500,00 kr

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