onsemi SiC Power Type N-Channel MOSFET, 142 A, 650 V N, 4-Pin TO-247 NTH4L015N065SC1
- RS-artikelnummer:
- 229-6458
- Tillv. art.nr:
- NTH4L015N065SC1
- Tillverkare / varumärke:
- onsemi
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234,98 kr
(exkl. moms)
293,72 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 234,98 kr |
| 10 - 99 | 202,50 kr |
| 100 + | 175,50 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6458
- Tillv. art.nr:
- NTH4L015N065SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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