onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247
- RS-artikelnummer:
- 229-6459
- Tillv. art.nr:
- NTH4L045N065SC1
- Tillverkare / varumärke:
- onsemi
Antal (1 rör med 450 enheter)*
36 130,95 kr
(exkl. moms)
45 163,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 450 + | 80,291 kr | 36 130,95 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6459
- Tillv. art.nr:
- NTH4L045N065SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
relaterade länkar
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247 NTH4L045N065SC1
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247 NTH4L060N090SC1
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247 NTH4L015N065SC1
- ROHM SiC N-Channel MOSFET 650 V, 4-Pin TO-247-4 SCT3030ARC14
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 7-Pin TO-263