onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247
- RS-artikelnummer:
- 229-6459
- Tillv. art.nr:
- NTH4L045N065SC1
- Tillverkare / varumärke:
- onsemi
Antal (1 rör med 450 enheter)*
36 130,95 kr
(exkl. moms)
45 163,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 18 maj 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 450 + | 80,291 kr | 36 130,95 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6459
- Tillv. art.nr:
- NTH4L045N065SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 187W | |
| Forward Voltage Vf | 4.4V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 187W | ||
Forward Voltage Vf 4.4V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Height 22.74mm | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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