Vishay TrenchFET Type N-Channel MOSFET, 114 A, 40 V Enhancement, 4-Pin SO-8 SQJ152EP-T1_GE3
- RS-artikelnummer:
- 228-2957
- Tillv. art.nr:
- SQJ152EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
96,77 kr
(exkl. moms)
120,96 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 28 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 9,677 kr | 96,77 kr |
| 100 - 240 | 9,117 kr | 91,17 kr |
| 250 - 490 | 8,221 kr | 82,21 kr |
| 500 - 990 | 7,739 kr | 77,39 kr |
| 1000 + | 7,246 kr | 72,46 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2957
- Tillv. art.nr:
- SQJ152EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 40 V power MOSFET.
100 % Rg and UIS tested
relaterade länkar
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ136ELP-T1_GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJA76EP-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 4-Pin SO-8 SQJ126EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
