Vishay TrenchFET Type N-Channel MOSFET, 500 A, 30 V Enhancement, 4-Pin SO-8 SQJ126EP-T1_GE3
- RS-artikelnummer:
- 228-2950
- Tillv. art.nr:
- SQJ126EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
127,79 kr
(exkl. moms)
159,74 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- 2 990 kvar, redo att levereras
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 25,558 kr | 127,79 kr |
| 50 - 120 | 21,75 kr | 108,75 kr |
| 125 - 245 | 20,452 kr | 102,26 kr |
| 250 - 495 | 19,196 kr | 95,98 kr |
| 500 + | 16,644 kr | 83,22 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2950
- Tillv. art.nr:
- SQJ126EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.94mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.94mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 30 V power MOSFET.
100 % Rg and UIS tested
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