Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- RS-artikelnummer:
- 188-5101
- Tillv. art.nr:
- SQJ208EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
132,16 kr
(exkl. moms)
165,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 13,216 kr | 132,16 kr |
| 100 - 240 | 12,555 kr | 125,55 kr |
| 250 - 490 | 10,573 kr | 105,73 kr |
| 500 - 990 | 8,602 kr | 86,02 kr |
| 1000 + | 7,269 kr | 72,69 kr |
*vägledande pris
- RS-artikelnummer:
- 188-5101
- Tillv. art.nr:
- SQJ208EP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 0.77V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1.01mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.47 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 0.77V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1.01mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.47 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.
TrenchFET® power MOSFET
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