Vishay N-Channel 30 V Type N-Channel MOSFET, 437 A, 30 V, 4-Pin PowerPAK (8x8L) SQJ128ELP-T1_GE3
- RS-artikelnummer:
- 225-9946
- Tillv. art.nr:
- SQJ128ELP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
141,23 kr
(exkl. moms)
176,54 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 29 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 14,123 kr | 141,23 kr |
| 100 - 240 | 13,698 kr | 136,98 kr |
| 250 - 490 | 12,981 kr | 129,81 kr |
| 500 - 990 | 12,432 kr | 124,32 kr |
| 1000 + | 11,715 kr | 117,15 kr |
*vägledande pris
- RS-artikelnummer:
- 225-9946
- Tillv. art.nr:
- SQJ128ELP-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 437A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Series | N-Channel 30 V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 6.25mm | |
| Width | 5 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 437A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Series N-Channel 30 V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 6.25mm | ||
Width 5 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
relaterade länkar
- Vishay N-Channel 30 V Type N-Channel MOSFET 30 V, 4-Pin PowerPAK (8x8L)
- Vishay Type N-Channel MOSFET 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJ184EP-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ150E-T1_GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 4-Pin PowerPAK (8x8L)
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V, 4-Pin PowerPAK (8x8L) SQJ174EP-T1_GE3
