Infineon IPL60R Type N-Channel MOSFET, 33 A, 600 V Enhancement, 5-Pin ThinPAK

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58 806,00 kr

(exkl. moms)

73 506,00 kr

(inkl. moms)

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3000 +19,602 kr58 806,00 kr

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RS-artikelnummer:
222-4910
Tillv. art.nr:
IPL60R075CFD7AUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Series

IPL60R

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

189W

Typical Gate Charge Qg @ Vgs

67nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

1.1mm

Length

8.1mm

Standards/Approvals

No

Width

8.1 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

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