Infineon IPD50R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R065C7AUMA1
- RS-artikelnummer:
- 222-4909
- Tillv. art.nr:
- IPL60R065C7AUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
116,28 kr
(exkl. moms)
145,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 04 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 58,14 kr | 116,28 kr |
| 10 - 18 | 50,625 kr | 101,25 kr |
| 20 - 48 | 47,095 kr | 94,19 kr |
| 50 - 98 | 44,185 kr | 88,37 kr |
| 100 + | 40,71 kr | 81,42 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4909
- Tillv. art.nr:
- IPL60R065C7AUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD50R | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 180W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD50R | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 180W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
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