Infineon IPD50R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 5-Pin ThinPAK

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102 579,00 kr

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128 223,00 kr

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3000 +34,193 kr102 579,00 kr

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RS-artikelnummer:
222-4908
Tillv. art.nr:
IPL60R065C7AUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Series

IPD50R

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

180W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

68nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Width

8.1 mm

Length

8.1mm

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

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