Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1
- RS-artikelnummer:
- 222-4907
- Tillv. art.nr:
- IPL60R060CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
150,78 kr
(exkl. moms)
188,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 25 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 75,39 kr | 150,78 kr |
| 10 - 18 | 67,09 kr | 134,18 kr |
| 20 - 48 | 63,39 kr | 126,78 kr |
| 50 - 98 | 58,855 kr | 117,71 kr |
| 100 + | 54,265 kr | 108,53 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4907
- Tillv. art.nr:
- IPL60R060CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | IPD50R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 219W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series IPD50R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 219W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
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