Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252

Se alla MOSFETs

Antal (1 rulle med 2500 enheter)*

22 042,50 kr

(exkl. moms)

27 552,50 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 04 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
2500 +8,817 kr22 042,50 kr

*vägledande pris

RS-artikelnummer:
222-4901
Tillv. art.nr:
IPD60R180C7ATMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Series

IPD50R

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

24nC

Maximum Gate Source Voltage Vgs

20 V

Width

6.22 mm

Length

6.73mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Enables increasing switching frequency without loss in efficiency

Measure showing key parameter for light load and full load efficiency

Doubling the switching frequency will half the size of magnetic components

Smaller packages for same R DS(on)

Can be used in many more positions for both hard and soft switching topologies

relaterade länkar