Infineon CoolMOS Type N-Channel MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 IPP60R120C7XKSA1

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87,14 kr

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108,92 kr

(inkl. moms)

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  • Dessutom levereras 966 enhet(er) från den 26 december 2025
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2 - 843,57 kr87,14 kr
10 - 1839,255 kr78,51 kr
20 - 4836,57 kr73,14 kr
50 - 9833,935 kr67,87 kr
100 +31,865 kr63,73 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
222-4702
Tillv. art.nr:
IPP60R120C7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

92W

Maximum Operating Temperature

150°C

Height

4.57mm

Width

15.95 mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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