Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 222-4697
- Tillv. art.nr:
- IPP60R070CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
2 796,40 kr
(exkl. moms)
3 495,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 350 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 55,928 kr | 2 796,40 kr |
| 100 - 200 | 51,455 kr | 2 572,75 kr |
| 250 + | 48,657 kr | 2 432,85 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4697
- Tillv. art.nr:
- IPP60R070CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Width | 15.95 mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Width 15.95 mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon MOSFETs, also known as MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
relaterade länkar
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R070CFD7XKSA1
- Infineon CoolMOS CP N-Channel MOSFET 650 V, 3-Pin TO-220 IPP60R099CPXKSA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB60R099P7ATMA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R099CPFKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPA60R280CFD7XKSA1
