Infineon OptiMOS-TM3 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ150N10LS3GATMA1

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132,20 kr

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165,20 kr

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10 - 4013,22 kr132,20 kr
50 - 9012,578 kr125,78 kr
100 - 24012,018 kr120,18 kr
250 - 49011,502 kr115,02 kr
500 +10,718 kr107,18 kr

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Förpackningsalternativ:
RS-artikelnummer:
222-4634
Tillv. art.nr:
BSZ150N10LS3GATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

63W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

150°C

Length

5.35mm

Standards/Approvals

No

Height

1.2mm

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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