Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1

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149,625 kr

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187,035 kr

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15 - 609,975 kr149,63 kr
75 - 1359,475 kr142,13 kr
150 - 3609,079 kr136,19 kr
375 - 7358,691 kr130,37 kr
750 +8,079 kr121,19 kr

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Förpackningsalternativ:
RS-artikelnummer:
222-4627
Tillv. art.nr:
BSZ028N04LSATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

114A

Maximum Drain Source Voltage Vds

40V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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