Infineon OptiMOS-TM3 Type N-Channel MOSFET, 63 A, 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1

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158,745 kr

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198,435 kr

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15 - 6010,583 kr158,75 kr
75 - 13510,057 kr150,86 kr
150 - 3609,639 kr144,59 kr
375 - 7359,214 kr138,21 kr
750 +8,572 kr128,58 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
222-4629
Tillv. art.nr:
BSZ068N06NSATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

60V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

46W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.2mm

Standards/Approvals

No

Length

5.35mm

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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