Infineon OptiMOS-TM5 Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin TDSON BSC098N10NS5ATMA1
- RS-artikelnummer:
- 222-4622
- Tillv. art.nr:
- BSC098N10NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
100,91 kr
(exkl. moms)
126,14 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 9 740 enhet(er) från den 26 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 10,091 kr | 100,91 kr |
| 50 - 90 | 9,587 kr | 95,87 kr |
| 100 - 240 | 9,184 kr | 91,84 kr |
| 250 - 490 | 8,781 kr | 87,81 kr |
| 500 + | 8,176 kr | 81,76 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4622
- Tillv. art.nr:
- BSC098N10NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS-TM5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS-TM5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
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