onsemi NTMT090N Type N-Channel MOSFET, 36 A, 650 V Enhancement, 4-Pin PQFN NTMT090N65S3HF
- RS-artikelnummer:
- 221-6734
- Tillv. art.nr:
- NTMT090N65S3HF
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
132,16 kr
(exkl. moms)
165,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 682 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 66,08 kr | 132,16 kr |
| 20 - 198 | 56,895 kr | 113,79 kr |
| 200 + | 49,39 kr | 98,78 kr |
*vägledande pris
- RS-artikelnummer:
- 221-6734
- Tillv. art.nr:
- NTMT090N65S3HF
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTMT090N | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 272W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTMT090N | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 272W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Height 8.1mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 569 pF
100% avalanche tested
relaterade länkar
- onsemi NTMT090N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT190N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT150N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi NTMT110N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi FCMT Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi FCMT Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN
- onsemi FCMT Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN FCMT360N65S3
- onsemi NTMT110N Type N-Channel MOSFET 650 V Enhancement, 4-Pin PQFN NTMT110N65S3HF
