onsemi FCMT Type N-Channel MOSFET, 10 A, 650 V Enhancement, 4-Pin PQFN FCMT360N65S3

Se alla MOSFETs

Antal (1 förpackning med 20 enheter)*

432,24 kr

(exkl. moms)

540,30 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 2 980 enhet(er), redo att levereras
Enheter
Per enhet
Per förpackning*
20 +21,612 kr432,24 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
195-2503
Tillv. art.nr:
FCMT360N65S3
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Package Type

PQFN

Series

FCMT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

18nC

Maximum Operating Temperature

150°C

Length

8mm

Height

1.05mm

Standards/Approvals

No

Width

8 mm

Automotive Standard

No

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.

relaterade länkar