onsemi NTMT190N Type N-Channel MOSFET, 20 A, 650 V Enhancement, 4-Pin PQFN

Se alla MOSFETs
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
221-6739
Tillv. art.nr:
NTMT190N65S3HF
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

650V

Series

NTMT190N

Package Type

PQFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

162W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Length

8.1mm

Height

8.1mm

Width

1.1 mm

Standards/Approvals

No

Automotive Standard

No

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 316 pF

100% avalanche tested

relaterade länkar