onsemi FCMT Type N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN
- RS-artikelnummer:
- 185-7980
- Tillv. art.nr:
- FCMT125N65S3
- Tillverkare / varumärke:
- onsemi
Försörjningsbrist
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- RS-artikelnummer:
- 185-7980
- Tillv. art.nr:
- FCMT125N65S3
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | FCMT | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 181W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.05mm | |
| Length | 8mm | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series FCMT | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 181W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.05mm | ||
Length 8mm | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Uppfyller ej RoHS
- COO (Country of Origin):
- PH
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 49 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF)
Optimized Capacitance
Typ. RDS(on) = 100 mΩ
Internal Gate Resistance: 0.5 Ω
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
LED Lighting
Adapter
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