Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8 IRF7490TRPBF

RS-artikelnummer:: 220-7479
Tillv. art.nr:: IRF7490TRPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8 IRF7490TRPBF

Mängdrabatt möjlig

Antal (1 förpackning med 15 enheter)*

147,435 kr

(exkl. moms)

184,29 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 11 925 enhet(er) från den 12 januari 2026

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Enheter	Per enhet	Per förpackning*
15 - 60	9,829 kr	147,44 kr
75 - 135	9,333 kr	140,00 kr
150 - 360	8,945 kr	134,18 kr
375 - 735	8,549 kr	128,24 kr
750 +	7,967 kr	119,51 kr

*vägledande pris

RS-artikelnummer:: 220-7479
Tillv. art.nr:: IRF7490TRPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.4A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	39mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Width	4 mm
	Height	1.75mm
	Automotive Standard	No
	Distrelec Product Id	304-39-417

	Välj alla
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.4A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 39mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Width 4 mm
	Height 1.75mm
	Automotive Standard No
	Distrelec Product Id 304-39-417

Datasheet - IRF7490TRPBF

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Industry standard surface-mount power package

Capable of being wave-soldered

Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8 IRF7490TRPBF

GRATIS leverans för online beställningar över 500,00 kr

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