Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1

RS-artikelnummer:: 220-7424
Tillv. art.nr:: IPG20N10S4L35AATMA1
Tillverkare / varumärke:: Infineon

Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

118,36 kr

(exkl. moms)

147,95 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 24 740 enhet(er) från den 29 december 2025

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per förpackning*
10 - 40	11,836 kr	118,36 kr
50 - 90	11,245 kr	112,45 kr
100 - 240	11,01 kr	110,10 kr
250 - 490	10,293 kr	102,93 kr
500 +	9,587 kr	95,87 kr

*vägledande pris

RS-artikelnummer:: 220-7424
Tillv. art.nr:: IPG20N10S4L35AATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	43W
	Typical Gate Charge Qg @ Vgs	13.4nC
	Maximum Gate Source Voltage Vgs	±16 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual
	Height	1mm
	Standards/Approvals	RoHS Compliant
	Length	5.15mm
	Width	5.9 mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 100V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 43W
	Typical Gate Charge Qg @ Vgs 13.4nC
	Maximum Gate Source Voltage Vgs ±16 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual
	Height 1mm
	Standards/Approvals RoHS Compliant
	Length 5.15mm
	Width 5.9 mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N10S4L35AATMA1

The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩReducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.

Dual N-channel Logic Level - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Feasible for automatic optical inspection (AOI)

Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar